Bond angle distortions and hydrogenation at the Si/a-SiN:H interface
Identifieur interne : 000305 ( France/Analysis ); précédent : 000304; suivant : 000306Bond angle distortions and hydrogenation at the Si/a-SiN:H interface
Auteurs : Etienne Bustarret [France]Source :
- Journal of Non-Crystalline Solids [ 0022-3093 ] ; 1989.
English descriptors
- Teeft :
Abstract
Abstract: The local elastic potential fluctuations associated with bond angle (θSiSiSi, θSiSiN, θNSiN) distortions in the Silicon-centered tetrahedra of the interfaces between c-Si or a-Si:H and a-Si3N4:H materials are evaluated within the Keating formalism. The particularities of the results for hydrogenated sites are in excellent agreement with some general features of the physico-chemistry of both the a-Si:H/a-Si3N4:H interface and the Si-rich a-SixNyHz alloys.
Url:
DOI: 10.1016/0022-3093(89)90710-2
Affiliations:
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ISTEX:64D90A950DEE6EAE6AE1E9A9F740B1D86891BD30Le document en format XML
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